| Anzahl | Preis |
|---|---|
| 1+ | 4.33 EUR |
| 10+ | 2.73 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FFSB0665B onsemi
Description: DIODE SIL CARB 650V 8A D2PAK-2, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-263 (D2Pak), Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 259pF @ 1V, 100kHz, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote FFSB0665B nach Preis ab 2.15 EUR bis 4.79 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FFSB0665B | Hersteller : onsemi |
 Description: DIODE SIL CARB 650V 8A D2PAK-2Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263 (D2Pak) Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 259pF @ 1V, 100kHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 712 Stücke: Lieferzeit 10-14 Tag (e) |
|