FFSB2065BDN-F085 onsemi
Hersteller: onsemiDescription: DIODE SIL CARB 650V 23.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 23.6A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 4.75 EUR |
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Technische Details FFSB2065BDN-F085 onsemi
Description: DIODE SIL CARB 650V 23.6A TO263, Packaging: Cut Tape (CT), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 421pF @ 1V, 100kHz, Current - Average Rectified (Io): 23.6A, Supplier Device Package: TO-263 (D2Pak), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote FFSB2065BDN-F085 nach Preis ab 5.44 EUR bis 11.33 EUR
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FFSB2065BDN-F085 | Hersteller : onsemi |
SiC Schottky Diodes Auto SiC Schottky Diode, 650 V |
auf Bestellung 476 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSB2065BDN-F085 | Hersteller : onsemi |
Description: DIODE SIL CARB 650V 23.6A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 421pF @ 1V, 100kHz Current - Average Rectified (Io): 23.6A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
auf Bestellung 387 Stücke: Lieferzeit 10-14 Tag (e) |
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| FFSB2065BDN-F085 | Hersteller : ONN |
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auf Bestellung 593 Stücke: Lieferzeit 21-28 Tag (e) |
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FFSB2065BDN-F085 | Hersteller : ON Semiconductor |
Diode Schottky 650V 23.6A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| FFSB2065BDN-F085 | Hersteller : ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 23.6A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.75V Kind of package: reel; tape Application: automotive industry Technology: SiC |
Produkt ist nicht verfügbar |