FFSD0665B ON Semiconductor
auf Bestellung 2464 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 107+ | 1.37 EUR |
| 108+ | 1.31 EUR |
| 110+ | 1.24 EUR |
| 112+ | 1.17 EUR |
| 114+ | 1.11 EUR |
| 250+ | 1.04 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.97 EUR |
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Technische Details FFSD0665B ON Semiconductor
Description: DIODE SIL CARB 650V 9.1A DPAK, Packaging: Cut Tape (CT), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 259pF @ 1V, 100kHz, Current - Average Rectified (Io): 9.1A, Supplier Device Package: TO-252 (DPAK), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote FFSD0665B nach Preis ab 0.97 EUR bis 5.67 EUR
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FFSD0665B | Hersteller : onsemi |
 SiC Schottky Diodes 650V 6A SIC SBD GEN1.5 |
auf Bestellung 1624 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSD0665B | Hersteller : onsemi |
Description: DIODE SIL CARB 650V 9.1A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 259pF @ 1V, 100kHz Current - Average Rectified (Io): 9.1A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 879 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSD0665B | Hersteller : onsemi |
Description: DIODE SIL CARB 650V 9.1A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 259pF @ 1V, 100kHz Current - Average Rectified (Io): 9.1A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 2220 Stücke: Lieferzeit 10-14 Tag (e) |
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| FFSD0665B | Hersteller : Aptina Imaging |
Diode Schottky SiC 650V 9.1A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2464 Stücke: Lieferzeit 14-21 Tag (e) |
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| FFSD0665B | Hersteller : ON Semiconductor |
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auf Bestellung 2450 Stücke: Lieferzeit 21-28 Tag (e) |
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| FFSD0665B | Hersteller : ONSEMI |
FFSD0665B SMD Schottky diodes |
Produkt ist nicht verfügbar |
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FFSD0665B | Hersteller : onsemi |
Description: DIODE SIL CARB 650V 9.1A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 259pF @ 1V, 100kHz Current - Average Rectified (Io): 9.1A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |