| Anzahl | Preis |
|---|---|
| 1+ | 5.65 EUR |
| 10+ | 3.7 EUR |
| 100+ | 2.59 EUR |
| 500+ | 2.22 EUR |
| 1000+ | 2.13 EUR |
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Technische Details FFSD0865B-F085 onsemi
Description: DIODE SIL CARB 650V 11.6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 336pF @ 1V, 100kHz, Current - Average Rectified (Io): 11.6A, Supplier Device Package: TO-252 (DPAK), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote FFSD0865B-F085 nach Preis ab 2.26 EUR bis 6.04 EUR
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FFSD0865B-F085 | Hersteller : onsemi |
 Description: DIODE SIL CARB 650V 11.6A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 336pF @ 1V, 100kHz Current - Average Rectified (Io): 11.6A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 1520 Stücke: Lieferzeit 10-14 Tag (e) |
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