Technische Details FFSD0865B ON Semiconductor
Description: DIODE SIL CARB 650V 11.6A TO252, Packaging: Cut Tape (CT), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 336pF @ 1V, 100kHz, Current - Average Rectified (Io): 11.6A, Supplier Device Package: TO-252 (DPAK), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote FFSD0865B nach Preis ab 1.89 EUR bis 8.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FFSD0865B | ON Semiconductor |
 Diode Schottky SiC 650V 11.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 22500 Stücke: Lieferzeit 14-21 Tag (e) |
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FFSD0865B | onsemi |
Description: DIODE SIL CARB 650V 11.6A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 336pF @ 1V, 100kHz Current - Average Rectified (Io): 11.6A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSD0865B | ON Semiconductor |
Diode Schottky SiC 650V 11.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FFSD0865B | onsemi |
SiC Schottky Diodes 650V 8A SIC SBD GEN1.5 |
auf Bestellung 4913 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSD0865B | onsemi |
Description: DIODE SIL CARB 650V 11.6A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 336pF @ 1V, 100kHz Current - Average Rectified (Io): 11.6A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 4724 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSD0865B | onsemi |
Description: DIODE SIL CARB 650V 11.6A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 336pF @ 1V, 100kHz Current - Average Rectified (Io): 11.6A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 2487 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSD0865B | ON Semiconductor |
Diode Schottky SiC 650V 11.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FFSD0865B | ONSEMI |
Description: ONSEMI - FFSD0865B - SIC SCHOTTKY DIODE, 650V, 8A, TO-252 tariffCode: 0 Bauform - Diode: TO-252 (DPAK) Kapazitive Gesamtladung: 22nC euEccn: NLR rohsCompliant: Y-EX Diodenmontage: Surface Mount hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Single Qualifikation: - isCanonical: Y Durchschnittlicher Durchlassstrom: 8A Anzahl der Pins: 3 Pin Produktpalette: EliteSiC Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Periodische Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C directShipCharge: 25 |
auf Bestellung 187 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 187 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| FFSD0865B | ON Semiconductor |
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auf Bestellung 2265 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FFSD0865B |
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Hersteller: ON Semiconductor
Diode Schottky SiC 650V 11.6A 3-Pin(2+Tab) DPAK T/R
Diode Schottky SiC 650V 11.6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 22500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.89 EUR |
| FFSD0865B |
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Hersteller: onsemi
Description: DIODE SIL CARB 650V 11.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 11.6A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 11.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 11.6A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.08 EUR |
| FFSD0865B |
|
Hersteller: ON Semiconductor
Diode Schottky SiC 650V 11.6A 3-Pin(2+Tab) DPAK T/R
Diode Schottky SiC 650V 11.6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 206+ | 3.21 EUR |
| 500+ | 2.84 EUR |
| 1000+ | 2.57 EUR |
| FFSD0865B |
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Hersteller: onsemi
SiC Schottky Diodes 650V 8A SIC SBD GEN1.5
SiC Schottky Diodes 650V 8A SIC SBD GEN1.5
auf Bestellung 4913 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.19 EUR |
| 10+ | 3.14 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.15 EUR |
| 2500+ | 2.01 EUR |
| FFSD0865B |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 11.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 11.6A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 11.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 11.6A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 4724 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.66 EUR |
| 10+ | 4.34 EUR |
| 100+ | 3.02 EUR |
| 500+ | 2.46 EUR |
| 1000+ | 2.4 EUR |
| FFSD0865B |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 11.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 11.6A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 11.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 11.6A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 2487 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.27 EUR |
| 10+ | 5.45 EUR |
| 100+ | 3.84 EUR |
| 500+ | 3.15 EUR |
| 1000+ | 2.94 EUR |
| FFSD0865B |
|
Hersteller: ON Semiconductor
Diode Schottky SiC 650V 11.6A 3-Pin(2+Tab) DPAK T/R
Diode Schottky SiC 650V 11.6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| FFSD0865B |
|
Hersteller: ONSEMI
Description: ONSEMI - FFSD0865B - SIC SCHOTTKY DIODE, 650V, 8A, TO-252
tariffCode: 0
Bauform - Diode: TO-252 (DPAK)
Kapazitive Gesamtladung: 22nC
euEccn: NLR
rohsCompliant: Y-EX
Diodenmontage: Surface Mount
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Single
Qualifikation: -
isCanonical: Y
Durchschnittlicher Durchlassstrom: 8A
Anzahl der Pins: 3 Pin
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
directShipCharge: 25
Description: ONSEMI - FFSD0865B - SIC SCHOTTKY DIODE, 650V, 8A, TO-252
tariffCode: 0
Bauform - Diode: TO-252 (DPAK)
Kapazitive Gesamtladung: 22nC
euEccn: NLR
rohsCompliant: Y-EX
Diodenmontage: Surface Mount
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Single
Qualifikation: -
isCanonical: Y
Durchschnittlicher Durchlassstrom: 8A
Anzahl der Pins: 3 Pin
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
directShipCharge: 25
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
| FFSD0865B |
|
Hersteller: ON Semiconductor
auf Bestellung 2265 Stücke:
Lieferzeit 21-28 Tag (e)