FFSH1065B-F155 onsemi
Hersteller: onsemi
Description: DIODE SIL CARB 650V 11.5A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 11.5A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
| Anzahl | Preis |
|---|---|
| 4+ | 4.82 EUR |
| 10+ | 3.12 EUR |
| 450+ | 1.76 EUR |
| 900+ | 1.63 EUR |
| 1350+ | 1.56 EUR |
| 2250+ | 1.48 EUR |
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Technische Details FFSH1065B-F155 onsemi
Description: DIODE SIL CARB 650V 11.5A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 421pF @ 1V, 100kHz, Current - Average Rectified (Io): 11.5A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote FFSH1065B-F155 nach Preis ab 1.57 EUR bis 4.88 EUR
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FFSH1065B-F155 | Hersteller : onsemi |
SiC Schottky Diodes 650V 10A SIC SBD GEN 1.5 |
auf Bestellung 1378 Stücke: Lieferzeit 10-14 Tag (e) |
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