auf Bestellung 704 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.52 EUR |
| 10+ | 13.50 EUR |
| 30+ | 12.65 EUR |
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Technische Details FFSH20120A-F085 onsemi
Description: DIODE SIL CARB 1.2KV 30A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1220pF @ 1V, 100KHz, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Qualification: AEC-Q101.
Weitere Produktangebote FFSH20120A-F085 nach Preis ab 12.29 EUR bis 16.81 EUR
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FFSH20120A-F085 | Hersteller : onsemi |
 Description: DIODE SIL CARB 1.2KV 30A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1220pF @ 1V, 100KHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Qualification: AEC-Q101 |
auf Bestellung 8048 Stücke: Lieferzeit 10-14 Tag (e) |
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