| Anzahl | Preis |
|---|---|
| 1+ | 19.08 EUR |
| 10+ | 18 EUR |
| 25+ | 16.81 EUR |
| 50+ | 16.6 EUR |
| 100+ | 15.51 EUR |
| 250+ | 15.31 EUR |
| 450+ | 14.29 EUR |
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Technische Details FFSH5065A-F155 onsemi
Description: DIODE SIL CARB 650V 60A TO247-3, Current - Reverse Leakage @ Vr: 200 µA @ 650 V, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-3, Current - Average Rectified (Io): 60A, Capacitance @ Vr, F: 2530pF @ 1V, 100kHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote FFSH5065A-F155 nach Preis ab 17.24 EUR bis 22.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FFSH5065A-F155 | onsemi |
 Description: DIODE SIL CARB 650V 60A TO247-3Current - Reverse Leakage @ Vr: 200 µA @ 650 V Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-3 Current - Average Rectified (Io): 60A Capacitance @ Vr, F: 2530pF @ 1V, 100kHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 2803 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| FFSH5065A-F155 | ON Semiconductor |
|
auf Bestellung 370 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FFSH5065A-F155 |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 60A TO247-3
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 60A
Capacitance @ Vr, F: 2530pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE SIL CARB 650V 60A TO247-3
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 60A
Capacitance @ Vr, F: 2530pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 2803 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 22.63 EUR |
| 10+ | 19.94 EUR |
| 100+ | 17.24 EUR |
| FFSH5065A-F155 |
|
Hersteller: ON Semiconductor
auf Bestellung 370 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH