FFSM0865B onsemi
Hersteller: onsemi
Description: DIODE SIL CARB 650V 11.6A 4PQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 11.6A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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Technische Details FFSM0865B onsemi
Description: DIODE SIL CARB 650V 11.6A 4PQFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 336pF @ 1V, 100kHz, Current - Average Rectified (Io): 11.6A, Supplier Device Package: 4-PQFN (8x8), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote FFSM0865B nach Preis ab 2.39 EUR bis 6.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FFSM0865B | onsemi |
Description: DIODE SIL CARB 650V 11.6A 4PQFN Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 336pF @ 1V, 100kHz Current - Average Rectified (Io): 11.6A Supplier Device Package: 4-PQFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSM0865B | onsemi |
SiC Schottky Diodes SIC SBD GEN1.5 650V 8A PQFM88 |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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| FFSM0865B | ON Semiconductor |
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auf Bestellung 2970 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FFSM0865B |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 11.6A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 11.6A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 11.6A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 11.6A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.76 EUR |
| 10+ | 4.83 EUR |
| 100+ | 3.92 EUR |
| 500+ | 3.47 EUR |
| 1000+ | 2.98 EUR |
| FFSM0865B |
|
Hersteller: onsemi
SiC Schottky Diodes SIC SBD GEN1.5 650V 8A PQFM88
SiC Schottky Diodes SIC SBD GEN1.5 650V 8A PQFM88
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.85 EUR |
| 10+ | 4.46 EUR |
| 100+ | 3.14 EUR |
| 500+ | 2.53 EUR |
| 1000+ | 2.39 EUR |
| FFSM0865B |
|
Hersteller: ON Semiconductor
auf Bestellung 2970 Stücke:
Lieferzeit 21-28 Tag (e)