| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.41 EUR |
| 10+ | 5.45 EUR |
| 100+ | 4.66 EUR |
| 500+ | 4.38 EUR |
| 3000+ | 4.19 EUR |
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Technische Details FFSM1065A onsemi
Description: DIODE SIL CARBIDE 650V 11A 4PQFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 575pF @ 1V, 100kHz, Current - Average Rectified (Io): 11A, Supplier Device Package: 4-PQFN (8x8), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.
Weitere Produktangebote FFSM1065A nach Preis ab 4.5 EUR bis 10.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FFSM1065A | onsemi |
 Description: DIODE SIL CARBIDE 650V 11A 4PQFNPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 575pF @ 1V, 100kHz Current - Average Rectified (Io): 11A Supplier Device Package: 4-PQFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
auf Bestellung 2910 Stücke: Lieferzeit 10-14 Tag (e) |
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| FFSM1065A | ON Semiconductor |
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auf Bestellung 2890 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FFSM1065A |
|
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 11A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 11A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 2910 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.58 EUR |
| 10+ | 7.04 EUR |
| 50+ | 5.53 EUR |
| 100+ | 5.05 EUR |
| 500+ | 4.5 EUR |
| FFSM1065A |
|
Hersteller: ON Semiconductor
auf Bestellung 2890 Stücke:
Lieferzeit 21-28 Tag (e)