FFSM1265A onsemi
Hersteller: onsemi
Description: DIODE SIL CARB 650V 12.5A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 665pF @ 1V, 100kHz
Current - Average Rectified (Io): 12.5A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.82 EUR |
| 10+ | 5.83 EUR |
| 100+ | 4.13 EUR |
| 500+ | 3.55 EUR |
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Technische Details FFSM1265A onsemi
Description: DIODE SIL CARB 650V 12.5A 4PQFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 665pF @ 1V, 100kHz, Current - Average Rectified (Io): 12.5A, Supplier Device Package: 4-PQFN (8x8), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.
Weitere Produktangebote FFSM1265A nach Preis ab 3.39 EUR bis 11.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FFSM1265A | onsemi |
SiC Schottky Diodes 650V 12A SIC SBD |
auf Bestellung 3021 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSM1265A | onsemi |
Description: DIODE SIL CARB 650V 12.5A 4PQFN Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 665pF @ 1V, 100kHz Current - Average Rectified (Io): 12.5A Supplier Device Package: 4-PQFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FFSM1265A |
|
Hersteller: onsemi
SiC Schottky Diodes 650V 12A SIC SBD
SiC Schottky Diodes 650V 12A SIC SBD
auf Bestellung 3021 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.92 EUR |
| 10+ | 5.34 EUR |
| 100+ | 4.19 EUR |
| 500+ | 3.61 EUR |
| 1000+ | 3.39 EUR |
| FFSM1265A |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 12.5A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 665pF @ 1V, 100kHz
Current - Average Rectified (Io): 12.5A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 12.5A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 665pF @ 1V, 100kHz
Current - Average Rectified (Io): 12.5A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.16 EUR |
| 10+ | 9.37 EUR |
| 100+ | 7.58 EUR |
| 500+ | 6.74 EUR |
| 1000+ | 5.77 EUR |