Technische Details FGA40T65SHD ON Semiconductor
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 40A; 134W; TO3P, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 40A, Power dissipation: 134W, Case: TO3P, Gate-emitter voltage: ±20V, Pulsed collector current: 120A, Mounting: THT, Gate charge: 72.2nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode.
Weitere Produktangebote FGA40T65SHD nach Preis ab 2.92 EUR bis 9.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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FGA40T65SHD | ON Semiconductor |
 Trans IGBT Chip N-CH 650V 80A 268W 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 6750 Stücke: Lieferzeit 14-21 Tag (e) |
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FGA40T65SHD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 134W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 72.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 424 Stücke: Lieferzeit 14-21 Tag (e) |
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FGA40T65SHD | onsemi |
IGBTs FS3TIGBT TO3PN 40A 650V |
auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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FGA40T65SHD | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-3PN |
auf Bestellung 251 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGA40T65SHD |
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Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 650V 80A 268W 3-Pin(3+Tab) TO-3P Tube
Trans IGBT Chip N-CH 650V 80A 268W 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 6750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 180+ | 3.59 EUR |
| 500+ | 3.34 EUR |
| 1000+ | 3.11 EUR |
| FGA40T65SHD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 424 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.95 EUR |
| 25+ | 3.51 EUR |
| 30+ | 2.92 EUR |
| FGA40T65SHD |
|
Hersteller: onsemi
IGBTs FS3TIGBT TO3PN 40A 650V
IGBTs FS3TIGBT TO3PN 40A 650V
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.95 EUR |
| 10+ | 5.9 EUR |
| FGA40T65SHD |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-3PN
Description: IGBT TRENCH FS 650V 80A TO-3PN
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.09 EUR |
| 10+ | 6.01 EUR |