FGA40T65SHD ON Semiconductor
auf Bestellung 6750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 171+ | 3.25 EUR |
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Technische Details FGA40T65SHD ON Semiconductor
Description: IGBT TRENCH FS 650V 80A TO-3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31.8 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-3PN, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19.2ns/65.6ns, Switching Energy: 1.01mJ (on), 297µJ (off), Test Condition: 400V, 40A, 6Ohm, 15V, Gate Charge: 72.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 268 W.
Weitere Produktangebote FGA40T65SHD nach Preis ab 3.20 EUR bis 7.60 EUR
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FGA40T65SHD | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 650V 80A 268W 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 302 Stücke: Lieferzeit 14-21 Tag (e) |
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FGA40T65SHD | Hersteller : onsemi / Fairchild |
IGBTs IGBT, 650 V, 40 A Field Stop Trench |
auf Bestellung 362 Stücke: Lieferzeit 10-14 Tag (e) |
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FGA40T65SHD | Hersteller : onsemi |
Description: IGBT TRENCH FS 650V 80A TO-3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31.8 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.2ns/65.6ns Switching Energy: 1.01mJ (on), 297µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 72.2 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
auf Bestellung 418 Stücke: Lieferzeit 10-14 Tag (e) |
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FGA40T65SHD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FGA40T65SHD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 268W 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FGA40T65SHD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 268W 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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| FGA40T65SHD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 134W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 72.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FGA40T65SHD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 134W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 72.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |