FGA40T65SHD onsemi
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 80A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
auf Bestellung 307 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 8.61 EUR |
10+ | 7.22 EUR |
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Technische Details FGA40T65SHD onsemi
Description: IGBT TRENCH FS 650V 80A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31.8 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-3PN, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19.2ns/65.6ns, Switching Energy: 1.01mJ (on), 297µJ (off), Test Condition: 400V, 40A, 6Ohm, 15V, Gate Charge: 72.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 268 W.
Weitere Produktangebote FGA40T65SHD nach Preis ab 4.65 EUR bis 8.66 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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FGA40T65SHD | Hersteller : onsemi / Fairchild | IGBT Transistors 650 V, 40 A Field Stop Trench IGBT |
auf Bestellung 383 Stücke: Lieferzeit 14-28 Tag (e) |
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FGA40T65SHD | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FGA40T65SHD | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 650V 80A 268W 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FGA40T65SHD | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 650V 80A 268W 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |