FGA50N100BNTD2 ON Semiconductor / Fairchild
auf Bestellung 306 Stücke:
Lieferzeit 14-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details FGA50N100BNTD2 ON Semiconductor / Fairchild
Description: IGBT 1000V 50A 156W TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A, Supplier Device Package: TO-3P, IGBT Type: NPT and Trench, Td (on/off) @ 25°C: 34ns/243ns, Test Condition: 600V, 60A, 10Ohm, 15V, Gate Charge: 257 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 156 W.
Weitere Produktangebote FGA50N100BNTD2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
FGA50N100BNTD2 | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 1000V 50A 156000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
|
 |
FGA50N100BNTD2 | Hersteller : onsemi |
Description: IGBT 1000V 50A 156W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-3P IGBT Type: NPT and Trench Td (on/off) @ 25°C: 34ns/243ns Test Condition: 600V, 60A, 10Ohm, 15V Gate Charge: 257 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 200 A Power - Max: 156 W |
Produkt ist nicht verfügbar |