FGA6530WDF

FGA6530WDF ON Semiconductor / Fairchild


FGA6530WDF-D-1809042.pdf Hersteller: ON Semiconductor / Fairchild
IGBT Transistors FS3 650V SHD prolferation
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Technische Details FGA6530WDF ON Semiconductor / Fairchild

Description: IGBT 650V 60A 176W TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 81 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A, Supplier Device Package: TO-3PN, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/42.4ns, Switching Energy: 960µJ (on), 162µJ (off), Test Condition: 400V, 30A, 6Ohm, 15V, Gate Charge: 37.4 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 176 W.

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FGA6530WDF FGA6530WDF Hersteller : onsemi fga6530wdf-d.pdf Description: IGBT 650V 60A 176W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 81 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/42.4ns
Switching Energy: 960µJ (on), 162µJ (off)
Test Condition: 400V, 30A, 6Ohm, 15V
Gate Charge: 37.4 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 176 W
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