FGA6560WDF onsemi
Hersteller: onsemiDescription: IGBT TRENCH/FS 650V 120A TO3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25.6ns/71ns
Switching Energy: 2.46mJ (on), 520µJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 306 W
auf Bestellung 3600 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 109+ | 6.63 EUR |
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Technische Details FGA6560WDF onsemi
Description: IGBT TRENCH/FS 650V 120A TO3PN, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 110 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: TO-3PN, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 25.6ns/71ns, Switching Energy: 2.46mJ (on), 520µJ (off), Test Condition: 400V, 60A, 6Ohm, 15V, Gate Charge: 84 nC, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 306 W.
Weitere Produktangebote FGA6560WDF nach Preis ab 9.1 EUR bis 11.78 EUR
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FGA6560WDF | Hersteller : onsemi / Fairchild |
IGBT Transistors FS3TIGBT TO3PN 60A 650V |
auf Bestellung 145 Stücke: Lieferzeit 14-28 Tag (e) |
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FGA6560WDF | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 153W; TO3PN Kind of package: tube Mounting: THT Collector-emitter voltage: 650V Power dissipation: 153W Gate charge: 84nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 180A Type of transistor: IGBT Case: TO3PN Gate-emitter voltage: ±20V Collector current: 60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGA6560WDF | Hersteller : onsemi |
Description: IGBT TRENCH/FS 650V 120A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25.6ns/71ns Switching Energy: 2.46mJ (on), 520µJ (off) Test Condition: 400V, 60A, 6Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 306 W |
Produkt ist nicht verfügbar |
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FGA6560WDF | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 153W; TO3PN Kind of package: tube Mounting: THT Collector-emitter voltage: 650V Power dissipation: 153W Gate charge: 84nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 180A Type of transistor: IGBT Case: TO3PN Gate-emitter voltage: ±20V Collector current: 60A |
Produkt ist nicht verfügbar |