auf Bestellung 274 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.45 EUR |
| 10+ | 7.34 EUR |
| 30+ | 5.21 EUR |
| 120+ | 4.31 EUR |
| 510+ | 3.68 EUR |
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Technische Details FGAF40N60SMD onsemi / Fairchild
Description: IGBT FIELD STOP 600V 80A TO-3PF, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 36 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A, Supplier Device Package: TO-3PF, IGBT Type: Field Stop, Td (on/off) @ 25°C: 12ns/92ns, Switching Energy: 870µJ (on), 260µJ (off), Test Condition: 400V, 40A, 6Ohm, 15V, Gate Charge: 119 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 115 W.
Weitere Produktangebote FGAF40N60SMD nach Preis ab 3.46 EUR bis 13.25 EUR
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FGAF40N60SMD | Hersteller : onsemi |
 Description: IGBT FIELD STOP 600V 80A TO-3PFPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Supplier Device Package: TO-3PF IGBT Type: Field Stop Td (on/off) @ 25°C: 12ns/92ns Switching Energy: 870µJ (on), 260µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 119 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 115 W |
auf Bestellung 193976 Stücke: Lieferzeit 10-14 Tag (e) |
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FGAF40N60SMD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 80A 115000mW 3-Pin(3+Tab) TO-3PF Tube |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGAF40N60SMD | Hersteller : ON-Semicoductor |
IGBT 600V 80A 115W FGAF40N60SMD TFGAF40N60smd Anzahl je Verpackung: 2 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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| FGAF40N60SMD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF Type of transistor: IGBT Power dissipation: 58W Case: TO3PF Mounting: THT Gate charge: 119nC Kind of package: tube Collector current: 40A Pulsed collector current: 120A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FGAF40N60SMD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF Type of transistor: IGBT Power dissipation: 58W Case: TO3PF Mounting: THT Gate charge: 119nC Kind of package: tube Collector current: 40A Pulsed collector current: 120A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |