
FGB3040G2-F085C ON Semiconductor

Trans IGBT Chip N-CH 390V 41A 150W 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
800+ | 1.94 EUR |
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Technische Details FGB3040G2-F085C ON Semiconductor
Description: IGBT 400V 41A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Reverse Recovery Time (trr): 1.9 µs, Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 900ns/4.8µs, Test Condition: 5V, 470Ohm, Gate Charge: 21 nC, Part Status: Active, Current - Collector (Ic) (Max): 41 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 150 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FGB3040G2-F085C nach Preis ab 1.95 EUR bis 6.11 EUR
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FGB3040G2-F085C | Hersteller : ON Semiconductor |
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auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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FGB3040G2-F085C | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Reverse Recovery Time (trr): 1.9 µs Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 900ns/4.8µs Test Condition: 5V, 470Ohm Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB3040G2-F085C | Hersteller : ON Semiconductor |
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auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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FGB3040G2-F085C | Hersteller : onsemi |
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auf Bestellung 467 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB3040G2-F085C | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Reverse Recovery Time (trr): 1.9 µs Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 900ns/4.8µs Test Condition: 5V, 470Ohm Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 808 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB3040G2-F085C | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FGB3040G2-F085C | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FGB3040G2-F085C | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGB3040G2-F085C | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |