FGB3040G2-F085C onsemi
Hersteller: onsemiDescription: IGBT 400V 41A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 1.9 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/4.8µs
Test Condition: 5V, 470Ohm
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.95 EUR |
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Technische Details FGB3040G2-F085C onsemi
Description: IGBT 400V 41A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Reverse Recovery Time (trr): 1.9 µs, Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 900ns/4.8µs, Test Condition: 5V, 470Ohm, Gate Charge: 21 nC, Part Status: Active, Current - Collector (Ic) (Max): 41 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 150 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FGB3040G2-F085C nach Preis ab 2.06 EUR bis 5.51 EUR
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FGB3040G2-F085C | Hersteller : onsemi |
Description: IGBT 400V 41A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Reverse Recovery Time (trr): 1.9 µs Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 900ns/4.8µs Test Condition: 5V, 470Ohm Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
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Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
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