FGB40T65SPD-F085 onsemi
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/35ns
Switching Energy: 970µJ (on), 280µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 36 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 267 W
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Technische Details FGB40T65SPD-F085 onsemi
Description: IGBT TRENCH FS 650V 80A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/35ns, Switching Energy: 970µJ (on), 280µJ (off), Test Condition: 400V, 40A, 6Ohm, 15V, Gate Charge: 36 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 267 W.
Weitere Produktangebote FGB40T65SPD-F085 nach Preis ab 4.02 EUR bis 13.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FGB40T65SPD-F085 | ONSEMI |
Description: ONSEMI - FGB40T65SPD-F085 - IGBT, n-Kanal, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pin(s)tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Kollektor-Emitter-Sättigungsspannung: 2V MSL: MSL 1 - unbegrenzt Verlustleistung: 267W SVHC: Lead (25-Jun-2025) Bauform - Transistor: TO-263AB Dauerkollektorstrom: 80A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 175°C |
auf Bestellung 2969 Stücke: Lieferzeit 14-21 Tag (e) |
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FGB40T65SPD-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level Type of transistor: IGBT Power dissipation: 134W Case: D2PAK Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Features of semiconductor devices: logic level Version: ESD Application: ignition systems Gate-emitter voltage: ±20V Collector current: 40A Collector-emitter voltage: 650V Pulsed collector current: 120A |
auf Bestellung 724 Stücke: Lieferzeit 14-21 Tag (e) |
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FGB40T65SPD-F085 | onsemi |
IGBTs Trench IGBT |
auf Bestellung 3903 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB40T65SPD-F085 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/35ns Switching Energy: 970µJ (on), 280µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 36 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 267 W |
auf Bestellung 2121 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB40T65SPD-F085 | ONSEMI |
Description: ONSEMI - FGB40T65SPD-F085 - IGBT, n-Kanal, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pin(s)tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 2V MSL: MSL 1 - unbegrenzt Verlustleistung: 267W SVHC: Lead (25-Jun-2025) Bauform - Transistor: TO-263AB Dauerkollektorstrom: 80A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 175°C |
auf Bestellung 2969 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGB40T65SPD-F085 |
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Hersteller: ONSEMI
Description: ONSEMI - FGB40T65SPD-F085 - IGBT, n-Kanal, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Kollektor-Emitter-Sättigungsspannung: 2V
MSL: MSL 1 - unbegrenzt
Verlustleistung: 267W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-263AB
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Description: ONSEMI - FGB40T65SPD-F085 - IGBT, n-Kanal, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Kollektor-Emitter-Sättigungsspannung: 2V
MSL: MSL 1 - unbegrenzt
Verlustleistung: 267W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-263AB
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
auf Bestellung 2969 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 5.41 EUR |
| 500+ | 4.5 EUR |
| 1000+ | 4.02 EUR |
| FGB40T65SPD-F085 |
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Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Power dissipation: 134W
Case: D2PAK
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Version: ESD
Application: ignition systems
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 650V
Pulsed collector current: 120A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Power dissipation: 134W
Case: D2PAK
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Version: ESD
Application: ignition systems
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 650V
Pulsed collector current: 120A
auf Bestellung 724 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.57 EUR |
| 14+ | 6.21 EUR |
| 16+ | 5.5 EUR |
| 25+ | 4.66 EUR |
| 100+ | 4.5 EUR |
| FGB40T65SPD-F085 |
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Hersteller: onsemi
IGBTs Trench IGBT
IGBTs Trench IGBT
auf Bestellung 3903 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.39 EUR |
| 10+ | 7.69 EUR |
| 100+ | 5.59 EUR |
| 500+ | 4.44 EUR |
| FGB40T65SPD-F085 |
![]() |
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/35ns
Switching Energy: 970µJ (on), 280µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 36 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 267 W
Description: IGBT TRENCH FS 650V 80A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/35ns
Switching Energy: 970µJ (on), 280µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 36 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 267 W
auf Bestellung 2121 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.54 EUR |
| 10+ | 7.74 EUR |
| 100+ | 5.58 EUR |
| FGB40T65SPD-F085 |
![]() |
Hersteller: ONSEMI
Description: ONSEMI - FGB40T65SPD-F085 - IGBT, n-Kanal, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2V
MSL: MSL 1 - unbegrenzt
Verlustleistung: 267W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-263AB
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Description: ONSEMI - FGB40T65SPD-F085 - IGBT, n-Kanal, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2V
MSL: MSL 1 - unbegrenzt
Verlustleistung: 267W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-263AB
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
auf Bestellung 2969 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 13.04 EUR |
| 29+ | 8.12 EUR |
| 100+ | 5.41 EUR |
| 500+ | 4.5 EUR |
| 1000+ | 4.02 EUR |



