
FGD3050G2 onsemi

Description: IGBT 500V 32A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
Supplier Device Package: TO-252 (DPAK)
Gate Charge: 22 nC
Grade: Automotive
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 150 W
Qualification: AEC-Q101
auf Bestellung 2181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
4+ | 5.19 EUR |
10+ | 3.38 EUR |
100+ | 2.35 EUR |
500+ | 2.01 EUR |
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Technische Details FGD3050G2 onsemi
Description: IGBT 500V 32A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Logic, Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A, Supplier Device Package: TO-252 (DPAK), Gate Charge: 22 nC, Grade: Automotive, Current - Collector (Ic) (Max): 32 A, Voltage - Collector Emitter Breakdown (Max): 500 V, Power - Max: 150 W, Qualification: AEC-Q101.
Weitere Produktangebote FGD3050G2 nach Preis ab 1.85 EUR bis 5.21 EUR
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FGD3050G2 | Hersteller : onsemi |
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auf Bestellung 11669 Stücke: Lieferzeit 10-14 Tag (e) |
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FGD3050G2 | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A Supplier Device Package: TO-252 (DPAK) Gate Charge: 22 nC Grade: Automotive Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 150 W Qualification: AEC-Q101 |
auf Bestellung 2100 Stücke: Lieferzeit 10-14 Tag (e) |
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FGD3050G2 | Hersteller : ON Semiconductor |
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auf Bestellung 2375 Stücke: Lieferzeit 21-28 Tag (e) |
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FGD3050G2 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FGD3050G2 | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 500V Collector current: 27A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Application: ignition systems Version: ESD Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGD3050G2 | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 500V Collector current: 27A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Application: ignition systems Version: ESD Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |