
auf Bestellung 6669 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 5.12 EUR |
10+ | 3.45 EUR |
100+ | 2.41 EUR |
500+ | 2.06 EUR |
1000+ | 2.02 EUR |
2500+ | 1.75 EUR |
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Produktbewertung abgeben
Technische Details FGD3050G2 onsemi
Description: IGBT 500V 32A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Logic, Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A, Supplier Device Package: TO-252 (DPAK), Gate Charge: 22 nC, Grade: Automotive, Current - Collector (Ic) (Max): 32 A, Voltage - Collector Emitter Breakdown (Max): 500 V, Power - Max: 150 W, Qualification: AEC-Q101.
Weitere Produktangebote FGD3050G2 nach Preis ab 2.01 EUR bis 5.19 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FGD3050G2 | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A Supplier Device Package: TO-252 (DPAK) Gate Charge: 22 nC Grade: Automotive Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 150 W Qualification: AEC-Q101 |
auf Bestellung 2181 Stücke: Lieferzeit 10-14 Tag (e) |
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FGD3050G2 | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A Supplier Device Package: TO-252 (DPAK) Gate Charge: 22 nC Grade: Automotive Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 150 W Qualification: AEC-Q101 |
auf Bestellung 2100 Stücke: Lieferzeit 10-14 Tag (e) |
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FGD3050G2 | Hersteller : ON Semiconductor |
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auf Bestellung 2375 Stücke: Lieferzeit 21-28 Tag (e) |
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FGD3050G2 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FGD3050G2 | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 500V Collector current: 27A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGD3050G2 | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 500V Collector current: 27A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |