FGD5T120SH ON Semiconductor
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.03 EUR |
| 5000+ | 0.97 EUR |
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Produktbewertung abgeben
Technische Details FGD5T120SH ON Semiconductor
Description: IGBT TRENCH FS 1200V 10A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A, Supplier Device Package: TO-252AA, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 4.8ns/24.8ns, Switching Energy: 247µJ (on), 94µJ (off), Test Condition: 600V, 5A, 30Ohm, 15V, Gate Charge: 6.7 nC, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 12.5 A, Power - Max: 69 W.
Weitere Produktangebote FGD5T120SH nach Preis ab 0.97 EUR bis 3.68 EUR
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FGD5T120SH | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 10A 69W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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FGD5T120SH | Hersteller : onsemi |
Description: IGBT TRENCH FS 1200V 10A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A Supplier Device Package: TO-252AA IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 4.8ns/24.8ns Switching Energy: 247µJ (on), 94µJ (off) Test Condition: 600V, 5A, 30Ohm, 15V Gate Charge: 6.7 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 12.5 A Power - Max: 69 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FGD5T120SH | Hersteller : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 5A Power dissipation: 28W Case: DPAK Gate-emitter voltage: ±25V Pulsed collector current: 12.5A Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1587 Stücke: Lieferzeit 7-14 Tag (e) |
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FGD5T120SH | Hersteller : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 5A Power dissipation: 28W Case: DPAK Gate-emitter voltage: ±25V Pulsed collector current: 12.5A Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
auf Bestellung 1587 Stücke: Lieferzeit 14-21 Tag (e) |
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FGD5T120SH | Hersteller : onsemi / Fairchild |
IGBTs 1200V 5A Field Stop Trench IGBT |
auf Bestellung 20405 Stücke: Lieferzeit 10-14 Tag (e) |
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FGD5T120SH | Hersteller : onsemi |
Description: IGBT TRENCH FS 1200V 10A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A Supplier Device Package: TO-252AA IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 4.8ns/24.8ns Switching Energy: 247µJ (on), 94µJ (off) Test Condition: 600V, 5A, 30Ohm, 15V Gate Charge: 6.7 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 12.5 A Power - Max: 69 W |
auf Bestellung 4262 Stücke: Lieferzeit 10-14 Tag (e) |
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FGD5T120SH | Hersteller : ONSEMI |
Description: ONSEMI - FGD5T120SH - IGBT, FS-Trench, 10 A, 2.9 V, 69 W, 1.2 kV, TO-252 (DPAK), 3 Pin(s) tariffCode: 85334010 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.9V usEccn: EAR99 euEccn: NLR Verlustleistung: 69W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 10A SVHC: Lead (27-Jun-2024) |
auf Bestellung 4320 Stücke: Lieferzeit 14-21 Tag (e) |
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FGD5T120SH | Hersteller : ONSEMI |
Description: ONSEMI - FGD5T120SH - IGBT, FS-Trench, 10 A, 2.9 V, 69 W, 1.2 kV, TO-252 (DPAK), 3 Pin(s) tariffCode: 85334010 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.9V usEccn: EAR99 euEccn: NLR Verlustleistung: 69W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 10A SVHC: Lead (27-Jun-2024) |
auf Bestellung 4320 Stücke: Lieferzeit 14-21 Tag (e) |
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FGD5T120SH | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 10A 69000mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 72500 Stücke: Lieferzeit 14-21 Tag (e) |
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FGD5T120SH | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 10A 69W 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FGD5T120SH | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 10A 69W 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |