FGD5T120SH onsemi
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A
Supplier Device Package: TO-252AA
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 4.8ns/24.8ns
Switching Energy: 247µJ (on), 94µJ (off)
Test Condition: 600V, 5A, 30Ohm, 15V
Gate Charge: 6.7 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 12.5 A
Power - Max: 69 W
| Anzahl | Preis |
|---|---|
| 2500+ | 1.04 EUR |
| 5000+ | 1 EUR |
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Technische Details FGD5T120SH onsemi
Description: IGBT TRENCH FS 1200V 10A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A, Supplier Device Package: TO-252AA, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 4.8ns/24.8ns, Switching Energy: 247µJ (on), 94µJ (off), Test Condition: 600V, 5A, 30Ohm, 15V, Gate Charge: 6.7 nC, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 12.5 A, Power - Max: 69 W.
Weitere Produktangebote FGD5T120SH nach Preis ab 1.12 EUR bis 3.77 EUR
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FGD5T120SH | Hersteller : ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 5A Power dissipation: 28W Case: DPAK Gate-emitter voltage: ±25V Pulsed collector current: 12.5A Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Features of semiconductor devices: logic level Version: ESD Application: ignition systems |
auf Bestellung 1527 Stücke: Lieferzeit 14-21 Tag (e) |
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FGD5T120SH | Hersteller : onsemi |
Description: IGBT TRENCH FS 1200V 10A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A Supplier Device Package: TO-252AA IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 4.8ns/24.8ns Switching Energy: 247µJ (on), 94µJ (off) Test Condition: 600V, 5A, 30Ohm, 15V Gate Charge: 6.7 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 12.5 A Power - Max: 69 W |
auf Bestellung 5939 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGD5T120SH | Hersteller : On Semiconductor |
IGBT 1200V 5A FS3 DPAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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FGD5T120SH | Hersteller : onsemi |
IGBTs 1200V 5A Field Stop Trench IGBT |
Produkt ist nicht verfügbar |
