FGH40T120SMDL4 ON Semiconductor
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details FGH40T120SMDL4 ON Semiconductor
Description: IGBT TRENCH/FS 1200V 80A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-247-4, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 44ns/464ns, Switching Energy: 2.24mJ (on), 1.02mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 370 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 555 W.
Weitere Produktangebote FGH40T120SMDL4
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FGH40T120SMDL4 | Hersteller : onsemi |
Description: IGBT TRENCH/FS 1200V 80A TO247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-4 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/464ns Switching Energy: 2.24mJ (on), 1.02mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 370 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 555 W |
Produkt ist nicht verfügbar |
||
FGH40T120SMDL4 | Hersteller : ON Semiconductor / Fairchild | IGBT Transistors FS2 TIGBT excellent swtching performance |
Produkt ist nicht verfügbar |