auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 82+ | 1.8 EUR |
| 86+ | 1.65 EUR |
| 89+ | 1.54 EUR |
| 90+ | 1.46 EUR |
| 100+ | 1.37 EUR |
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Technische Details FGH40T65SQD-F155 ON Semiconductor
Description: IGBT TRENCH FS 650V 80A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31.8 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 16.4ns/86.4ns, Switching Energy: 138µJ (on), 52µJ (off), Test Condition: 400V, 10A, 6Ohm, 15V, Gate Charge: 80 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 238 W.
Weitere Produktangebote FGH40T65SQD-F155 nach Preis ab 3.07 EUR bis 7.83 EUR
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FGH40T65SQD-F155 | Hersteller : onsemi |
 IGBTs 650V 40A FS4 TRENCH IGBT |
auf Bestellung 101 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH40T65SQD-F155 | Hersteller : onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31.8 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16.4ns/86.4ns Switching Energy: 138µJ (on), 52µJ (off) Test Condition: 400V, 10A, 6Ohm, 15V Gate Charge: 80 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 238 W |
auf Bestellung 682 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGH40T65SQD-F155 | Hersteller : ON Semiconductor |
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auf Bestellung 322 Stücke: Lieferzeit 21-28 Tag (e) |
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| FGH40T65SQD-F155 | Hersteller : ONSEMI |
Description: ONSEMI - FGH40T65SQD-F155 - FIELD STOP TRENCH IGBT, 650V-80A, TO-247 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 337 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH40T65SQD-F155 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 268000mW 3- |
Produkt ist nicht verfügbar |
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| FGH40T65SQD-F155 | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 80nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGH40T65SQD_F155 | Hersteller : onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31.8 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16.4ns/86.4ns Switching Energy: 138µJ (on), 52µJ (off) Test Condition: 400V, 10A, 6Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 238 W |
Produkt ist nicht verfügbar |
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| FGH40T65SQD-F155 | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 80nC Kind of package: tube |
Produkt ist nicht verfügbar |