FGH40T65UPD ON Semiconductor / Fairchild
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Technische Details FGH40T65UPD ON Semiconductor / Fairchild
Description: IGBT TRENCH/FS 650V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 43 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/144ns, Switching Energy: 1.59mJ (on), 580µJ (off), Test Condition: 400V, 40A, 7Ohm, 15V, Gate Charge: 177 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 268 W.
Weitere Produktangebote FGH40T65UPD
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FGH40T65UPD | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FGH40T65UPD | Hersteller : onsemi |
Description: IGBT TRENCH/FS 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/144ns Switching Energy: 1.59mJ (on), 580µJ (off) Test Condition: 400V, 40A, 7Ohm, 15V Gate Charge: 177 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
Produkt ist nicht verfügbar |