Technische Details FGH4L40T120LQD ON Semiconductor
Description: IGBT TRENCH FS 1200V 80A TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 59 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A, Supplier Device Package: TO-247-4L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 42ns/218ns, Switching Energy: 1.04mJ (on), 1.35mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 227 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 306 W.
Weitere Produktangebote FGH4L40T120LQD nach Preis ab 2.01 EUR bis 17.17 EUR
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FGH4L40T120LQD | ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 80A 306W 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 383 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH4L40T120LQD | onsemi |
Description: IGBT TRENCH FS 1200V 80A TO-247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42ns/218ns Switching Energy: 1.04mJ (on), 1.35mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 227 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 306 W |
auf Bestellung 266 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH4L40T120LQD | onsemi |
IGBTs 1200V 40A FSIII IGBT LOW VCESAT AND FAST FRD |
auf Bestellung 384 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH4L40T120LQD | ONSEMI |
Description: ONSEMI - FGH4L40T120LQD - IGBT, 80 A, 1.55 V, 306 W, 1.2 kV, TO-247, 4 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.55V Verlustleistung: 306W SVHC: Lead (25-Jun-2025) Bauform - Transistor: TO-247 Dauerkollektorstrom: 80A Anzahl der Pins: 4Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 175°C |
auf Bestellung 506 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FGH4L40T120LQD |
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Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 80A 306W 4-Pin(4+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 80A 306W 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 383 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 88+ | 2.01 EUR |
| FGH4L40T120LQD |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/218ns
Switching Energy: 1.04mJ (on), 1.35mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 227 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/218ns
Switching Energy: 1.04mJ (on), 1.35mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 227 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.11 EUR |
| 10+ | 11.76 EUR |
| FGH4L40T120LQD |
|
Hersteller: onsemi
IGBTs 1200V 40A FSIII IGBT LOW VCESAT AND FAST FRD
IGBTs 1200V 40A FSIII IGBT LOW VCESAT AND FAST FRD
auf Bestellung 384 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.17 EUR |
| 10+ | 11.82 EUR |
| 120+ | 8.1 EUR |
| FGH4L40T120LQD |
|
Hersteller: ONSEMI
Description: ONSEMI - FGH4L40T120LQD - IGBT, 80 A, 1.55 V, 306 W, 1.2 kV, TO-247, 4 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.55V
Verlustleistung: 306W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-247
Dauerkollektorstrom: 80A
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Description: ONSEMI - FGH4L40T120LQD - IGBT, 80 A, 1.55 V, 306 W, 1.2 kV, TO-247, 4 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.55V
Verlustleistung: 306W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-247
Dauerkollektorstrom: 80A
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
auf Bestellung 506 Stücke:
Lieferzeit 14-21 Tag (e)