FGH4L40T120LQD ON Semiconductor
auf Bestellung 4050 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 450+ | 6.37 EUR |
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Technische Details FGH4L40T120LQD ON Semiconductor
Description: IGBT TRENCH FS 1200V 80A TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 59 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A, Supplier Device Package: TO-247-4L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 42ns/218ns, Switching Energy: 1.04mJ (on), 1.35mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 227 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 306 W.
Weitere Produktangebote FGH4L40T120LQD nach Preis ab 6.42 EUR bis 13.57 EUR
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FGH4L40T120LQD | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 80A 306W 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 383 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH4L40T120LQD | Hersteller : onsemi |
Description: IGBT TRENCH FS 1200V 80A TO-247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42ns/218ns Switching Energy: 1.04mJ (on), 1.35mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 227 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 306 W |
auf Bestellung 4326 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH4L40T120LQD | Hersteller : onsemi |
IGBTs 1200V 40A FSIII IGBT LOW VCESAT AND FAST FRD |
auf Bestellung 509 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH4L40T120LQD | Hersteller : ONSEMI |
Description: ONSEMI - FGH4L40T120LQD - IGBT, 80 A, 1.55 V, 306 W, 1.2 kV, TO-247, 4 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 306W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 80A SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 515 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGH4L40T120LQD | Hersteller : ON Semiconductor |
FGH4L40T120LQD |
Produkt ist nicht verfügbar |
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| FGH4L40T120LQD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 153W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 227nC Kind of package: tube Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FGH4L40T120LQD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 153W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 227nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |