FGH75T65UPD-F085 onsemi
Hersteller: onsemiDescription: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/166ns
Switching Energy: 2.85mJ (on), 1.2mJ (off)
Test Condition: 400V, 75A, 3Ohm, 15V
Gate Charge: 578 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 15.07 EUR |
| 30+ | 8.91 EUR |
| 120+ | 7.56 EUR |
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Technische Details FGH75T65UPD-F085 onsemi
Description: IGBT TRENCH FS 650V 150A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 85 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 32ns/166ns, Switching Energy: 2.85mJ (on), 1.2mJ (off), Test Condition: 400V, 75A, 3Ohm, 15V, Gate Charge: 578 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 375 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FGH75T65UPD-F085 nach Preis ab 7.27 EUR bis 15.19 EUR
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FGH75T65UPD-F085 | Hersteller : onsemi / Fairchild |
IGBTs 650V/75A FS TRENCH IGBT |
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FGH75T65UPD-F085 | Hersteller : ONSEMI |
Description: ONSEMI - FGH75T65UPD-F085 - IGBT, 150 A, 1.69 V, 375 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.69V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-247 Dauerkollektorstrom: 150A Anzahl der Pins: 3Pin(s) Produktpalette: Trench Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: Lead (27-Jun-2024) |
auf Bestellung 559 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGH75T65UPD-F085 | Hersteller : ON Semiconductor |
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auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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FGH75T65UPD-F085 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 150A 375000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FGH75T65UPD-F085 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 150A 375W 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
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| FGH75T65UPD-F085 | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FGH75T65UPD-F085 | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube |
Produkt ist nicht verfügbar |