FGHL40T65MQDT onsemi
Hersteller: onsemiDescription: IGBT TRENCH FS 650V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/75ns
Switching Energy: 880µJ (on), 490µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
auf Bestellung 1712 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.9 EUR |
| 30+ | 4.44 EUR |
| 120+ | 3.68 EUR |
| 510+ | 3.12 EUR |
| 1020+ | 2.95 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FGHL40T65MQDT onsemi
Description: IGBT TRENCH FS 650V 60A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 86 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/75ns, Switching Energy: 880µJ (on), 490µJ (off), Test Condition: 400V, 40A, 6Ohm, 15V, Gate Charge: 80 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 238 W.
Weitere Produktangebote FGHL40T65MQDT nach Preis ab 3.45 EUR bis 8.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FGHL40T65MQDT | Hersteller : onsemi |
IGBTs FS4 MID SPEED IGBT 650V 4 |
auf Bestellung 504 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
FGHL40T65MQDT | Hersteller : ONSEMI |
Description: ONSEMI - FGHL40T65MQDT - IGBT, 60 A, 1.45 V, 238 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.45V usEccn: EAR99 euEccn: NLR Verlustleistung: 238W Bauform - Transistor: TO-247 Dauerkollektorstrom: 60A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C SVHC: Lead (27-Jun-2024) |
auf Bestellung 7070 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
| FGHL40T65MQDT | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 80nC |
Produkt ist nicht verfügbar |