FGHL40T65MQDT onsemi
Hersteller: onsemiIGBTs IGBT - 650 V 40 A FS4 medium switching speed IGBT with full rated copack diode
auf Bestellung 346 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.5 EUR |
| 10+ | 4.47 EUR |
| 120+ | 3.7 EUR |
| 510+ | 3.45 EUR |
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Technische Details FGHL40T65MQDT onsemi
Description: IGBT TRENCH FS 650V 60A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 86 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/75ns, Switching Energy: 880µJ (on), 490µJ (off), Test Condition: 400V, 40A, 6Ohm, 15V, Gate Charge: 80 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 238 W.
Weitere Produktangebote FGHL40T65MQDT nach Preis ab 3.71 EUR bis 7.59 EUR
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FGHL40T65MQDT | Hersteller : onsemi |
Description: IGBT TRENCH FS 650V 60A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 86 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/75ns Switching Energy: 880µJ (on), 490µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 238 W |
auf Bestellung 391 Stücke: Lieferzeit 10-14 Tag (e) |
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FGHL40T65MQDT | Hersteller : ONSEMI |
Description: ONSEMI - FGHL40T65MQDT - IGBT, 60 A, 1.45 V, 238 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V usEccn: EAR99 euEccn: NLR Verlustleistung: 238W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 6709 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGHL40T65MQDT | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 60A 238000mW Tube |
Produkt ist nicht verfügbar |
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| FGHL40T65MQDT | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 80nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FGHL40T65MQDT | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 80nC Kind of package: tube |
Produkt ist nicht verfügbar |