FGHL50T65MQDT onsemi
Hersteller: onsemiDescription: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/90ns
Switching Energy: 1.19mJ (on), 630µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
auf Bestellung 263495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.15 EUR |
| 30+ | 5.2 EUR |
| 120+ | 4.33 EUR |
| 510+ | 3.7 EUR |
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Technische Details FGHL50T65MQDT onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 79 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 21ns/90ns, Switching Energy: 1.19mJ (on), 630µJ (off), Test Condition: 400V, 50A, 6Ohm, 15V, Gate Charge: 99 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 268 W.
Weitere Produktangebote FGHL50T65MQDT nach Preis ab 3.94 EUR bis 9.31 EUR
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FGHL50T65MQDT | Hersteller : onsemi |
IGBTs FS4 MID SPEED IGBT 650V 50A TO247-3L WITH FULL RATED CURRENT DIODE |
auf Bestellung 2186 Stücke: Lieferzeit 10-14 Tag (e) |
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FGHL50T65MQDT | Hersteller : ONSEMI |
Description: ONSEMI - FGHL50T65MQDT - IGBT, 80 A, 1.45 V, 268 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V usEccn: EAR99 euEccn: NLR Verlustleistung: 268W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 80A SVHC: Lead (27-Jun-2024) |
auf Bestellung 1315 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGHL50T65MQDT | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 268000mW Tube |
Produkt ist nicht verfügbar |
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FGHL50T65MQDT | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 268W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FGHL50T65MQDT | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 134W Kind of package: tube Gate charge: 99nC Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Pulsed collector current: 200A Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FGHL50T65MQDT | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 134W Kind of package: tube Gate charge: 99nC Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Pulsed collector current: 200A Type of transistor: IGBT |
Produkt ist nicht verfügbar |