auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.31 EUR |
| 10+ | 8.34 EUR |
| 30+ | 5.77 EUR |
| 120+ | 4.82 EUR |
| 270+ | 4.35 EUR |
| 510+ | 4.19 EUR |
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Technische Details FGHL50T65SQDT onsemi
Description: IGBT TRENCH FS 650V 100A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22.8ns/70ns, Switching Energy: 223µJ (on), 91.13µJ (off), Test Condition: 400V, 12.5A, 4.7Ohm, 15V, Gate Charge: 99.7 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 268 W.
Weitere Produktangebote FGHL50T65SQDT nach Preis ab 4.71 EUR bis 9.91 EUR
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FGHL50T65SQDT | Hersteller : onsemi |
 Description: IGBT TRENCH FS 650V 100A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22.8ns/70ns Switching Energy: 223µJ (on), 91.13µJ (off) Test Condition: 400V, 12.5A, 4.7Ohm, 15V Gate Charge: 99.7 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
auf Bestellung 416 Stücke: Lieferzeit 10-14 Tag (e) |
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FGHL50T65SQDT | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 100A 268000mW 3-Pin(3+Tab) TO-247 Tube |
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FGHL50T65SQDT | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FGHL50T65SQDT | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 134W Kind of package: tube Gate charge: 99.7nC Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Pulsed collector current: 200A Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FGHL50T65SQDT | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 134W Kind of package: tube Gate charge: 99.7nC Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 650V Pulsed collector current: 200A Type of transistor: IGBT |
Produkt ist nicht verfügbar |