FGHL75T65MQD onsemi
Hersteller: onsemiDescription: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/176ns
Switching Energy: 1.94mJ (on), 1.55mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
auf Bestellung 7120 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.89 EUR |
| 10+ | 7.37 EUR |
| 450+ | 4.57 EUR |
| 900+ | 4.53 EUR |
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Technische Details FGHL75T65MQD onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 36 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 33ns/176ns, Switching Energy: 1.94mJ (on), 1.55mJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 145 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 375 W.
Weitere Produktangebote FGHL75T65MQD nach Preis ab 5.24 EUR bis 11.05 EUR
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FGHL75T65MQD | Hersteller : onsemi |
IGBTs 650 V 75 A FS4 |
auf Bestellung 391 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGHL75T65MQD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 375000mW Tube |
Produkt ist nicht verfügbar |
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| FGHL75T65MQD | Hersteller : ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 145nC Kind of package: tube |
Produkt ist nicht verfügbar |