FGHL75T65MQDT onsemi
Hersteller: onsemi
Description: FS4 MID SPEED IGBT 650V 75A TO24
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/118ns
Switching Energy: 2.35mJ (on), 1.25mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Description: FS4 MID SPEED IGBT 650V 75A TO24
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/118ns
Switching Energy: 2.35mJ (on), 1.25mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
auf Bestellung 306 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 15.63 EUR |
10+ | 13.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FGHL75T65MQDT onsemi
Description: FS4 MID SPEED IGBT 650V 75A TO24, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 107 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 24ns/118ns, Switching Energy: 2.35mJ (on), 1.25mJ (off), Test Condition: 400V, 75A, 4.7Ohm, 15V, Gate Charge: 149 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 375 W.
Weitere Produktangebote FGHL75T65MQDT nach Preis ab 8.11 EUR bis 15.73 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FGHL75T65MQDT | Hersteller : onsemi | IGBT Transistors FS4 MID SPEED IGBT 650V 75A TO247-3L WITH FULL RATED CURRENT DIODE |
auf Bestellung 1504 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
FGHL75T65MQDT | Hersteller : ONSEMI |
Description: ONSEMI - FGHL75T65MQDT - IGBT, 80 A, 1.45 V, 375 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V usEccn: EAR99 euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 80A SVHC: Lead (14-Jun-2023) |
auf Bestellung 1340 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
FGHL75T65MQDT | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 650V 80A 375000mW Tube |
Produkt ist nicht verfügbar |