FGHL75T65MQDT onsemi
Hersteller: onsemiIGBTs IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.47 EUR |
| 10+ | 7.43 EUR |
| 120+ | 5.26 EUR |
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Technische Details FGHL75T65MQDT onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 107 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 24ns/118ns, Switching Energy: 2.35mJ (on), 1.25mJ (off), Test Condition: 400V, 75A, 4.7Ohm, 15V, Gate Charge: 149 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 375 W.
Weitere Produktangebote FGHL75T65MQDT nach Preis ab 4.71 EUR bis 10.7 EUR
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FGHL75T65MQDT | Hersteller : onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/118ns Switching Energy: 2.35mJ (on), 1.25mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W |
auf Bestellung 671 Stücke: Lieferzeit 10-14 Tag (e) |
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FGHL75T65MQDT | Hersteller : ONSEMI |
Description: ONSEMI - FGHL75T65MQDT - IGBT, 80 A, 1.45 V, 375 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V usEccn: EAR99 euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 80A SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 811 Stücke: Lieferzeit 14-21 Tag (e) |
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FGHL75T65MQDT | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 375000mW Tube |
Produkt ist nicht verfügbar |
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| FGHL75T65MQDT | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 149nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FGHL75T65MQDT | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 149nC Kind of package: tube |
Produkt ist nicht verfügbar |