auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.64 EUR |
| 10+ | 13.57 EUR |
| 30+ | 9.77 EUR |
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Technische Details FGY100T65SCDT onsemi
Description: IGBT TRENCH FS 650V 200A TO-247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 62 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 84ns/216ns, Switching Energy: 5.4mJ (on), 3.8mJ (off), Test Condition: 400V, 100A, 4.7Ohm, 15V, Gate Charge: 157 nC, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 750 W.
Weitere Produktangebote FGY100T65SCDT nach Preis ab 9.33 EUR bis 15.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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FGY100T65SCDT | Hersteller : onsemi |
 Description: IGBT TRENCH FS 650V 200A TO-247Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 62 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 84ns/216ns Switching Energy: 5.4mJ (on), 3.8mJ (off) Test Condition: 400V, 100A, 4.7Ohm, 15V Gate Charge: 157 nC Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 750 W |
auf Bestellung 353 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGY100T65SCDT | Hersteller : ON Semiconductor |
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auf Bestellung 234 Stücke: Lieferzeit 21-28 Tag (e) |
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FGY100T65SCDT | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 200A 750000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FGY100T65SCDT | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 200A 750W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FGY100T65SCDT | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±25V Collector current: 100A Pulsed collector current: 300A Type of transistor: IGBT Power dissipation: 375W Kind of package: tube Gate charge: 157nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FGY100T65SCDT | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±25V Collector current: 100A Pulsed collector current: 300A Type of transistor: IGBT Power dissipation: 375W Kind of package: tube Gate charge: 157nC |
Produkt ist nicht verfügbar |