Technische Details FGY100T65SCDT onsemi
Description: IGBT TRENCH FS 650V 200A TO-247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 62 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 84ns/216ns, Switching Energy: 5.4mJ (on), 3.8mJ (off), Test Condition: 400V, 100A, 4.7Ohm, 15V, Gate Charge: 157 nC, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 750 W.
Weitere Produktangebote FGY100T65SCDT nach Preis ab 11.1 EUR bis 18.3 EUR
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FGY100T65SCDT | onsemi |
 Description: IGBT TRENCH FS 650V 200A TO-247Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 62 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 84ns/216ns Switching Energy: 5.4mJ (on), 3.8mJ (off) Test Condition: 400V, 100A, 4.7Ohm, 15V Gate Charge: 157 nC Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 750 W |
auf Bestellung 353 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGY100T65SCDT | ON Semiconductor |
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auf Bestellung 234 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FGY100T65SCDT |
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Hersteller: onsemi
Description: IGBT TRENCH FS 650V 200A TO-247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/216ns
Switching Energy: 5.4mJ (on), 3.8mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 157 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
Description: IGBT TRENCH FS 650V 200A TO-247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/216ns
Switching Energy: 5.4mJ (on), 3.8mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 157 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.3 EUR |
| 30+ | 11.1 EUR |
| FGY100T65SCDT |
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Hersteller: ON Semiconductor
auf Bestellung 234 Stücke:
Lieferzeit 21-28 Tag (e)