auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.58 EUR |
| 10+ | 7.96 EUR |
| 120+ | 6.81 EUR |
| 510+ | 5.68 EUR |
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Technische Details FGY120T65SPD onsemi
Description: FS3 IGBT 650V/120A AND STEALTH D, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 107 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/80ns, Switching Energy: 6.6mJ (on), 3.8mJ (off), Test Condition: 400V, 120A, 5Ohm, 15V, Gate Charge: 187 nC, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 360 A, Power - Max: 714 W.
Weitere Produktangebote FGY120T65SPD nach Preis ab 7.97 EUR bis 11.76 EUR
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FGY120T65SPD | Hersteller : onsemi |
 Description: FS3 IGBT 650V/120A AND STEALTH DPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/80ns Switching Energy: 6.6mJ (on), 3.8mJ (off) Test Condition: 400V, 120A, 5Ohm, 15V Gate Charge: 187 nC Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 360 A Power - Max: 714 W |
auf Bestellung 402 Stücke: Lieferzeit 10-14 Tag (e) |
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