FGY140T120SWD ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - FGY140T120SWD - IGBT, 280 A, 1.7 V, 1.153 kW, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.7V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.153kW
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop VII Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 280A
SVHC: No SVHC (14-Jun-2023)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 30.46 EUR |
| 10+ | 25.01 EUR |
| 11+ | 20.08 EUR |
| 50+ | 19.49 EUR |
| 100+ | 18.9 EUR |
| 250+ | 18.5 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
9 Stücke
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Produktbewertung abgeben
Technische Details FGY140T120SWD ONSEMI
Description: IGBT FS 1200V 280A TO-247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 307.3 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 140A, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 59.2ns/249.6ns, Switching Energy: 4.7mJ (on), 2.3mJ (off), Test Condition: 600V, 140A, 4.7Ohm, 15V, Gate Charge: 415.4 nC, Current - Collector (Ic) (Max): 280 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 560 A, Power - Max: 1150 W.
Weitere Produktangebote FGY140T120SWD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
FGY140T120SWD | onsemi |
Description: IGBT FS 1200V 280A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 307.3 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 140A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 59.2ns/249.6ns Switching Energy: 4.7mJ (on), 2.3mJ (off) Test Condition: 600V, 140A, 4.7Ohm, 15V Gate Charge: 415.4 nC Current - Collector (Ic) (Max): 280 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 560 A Power - Max: 1150 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FGY140T120SWD | onsemi |
IGBTs 1200V, 140A Field Stop VII (FS7) Fast Discrete IGBT in Power TO247-3L Packaging |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FGY140T120SWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 140A Power dissipation: 576W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 560A Mounting: THT Gate charge: 415.4nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FGY140T120SWD |
|
Hersteller: onsemi
Description: IGBT FS 1200V 280A TO-247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 307.3 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 140A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 59.2ns/249.6ns
Switching Energy: 4.7mJ (on), 2.3mJ (off)
Test Condition: 600V, 140A, 4.7Ohm, 15V
Gate Charge: 415.4 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 1150 W
Description: IGBT FS 1200V 280A TO-247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 307.3 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 140A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 59.2ns/249.6ns
Switching Energy: 4.7mJ (on), 2.3mJ (off)
Test Condition: 600V, 140A, 4.7Ohm, 15V
Gate Charge: 415.4 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 1150 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGY140T120SWD |
|
Hersteller: onsemi
IGBTs 1200V, 140A Field Stop VII (FS7) Fast Discrete IGBT in Power TO247-3L Packaging
IGBTs 1200V, 140A Field Stop VII (FS7) Fast Discrete IGBT in Power TO247-3L Packaging
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGY140T120SWD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH