FGY160T65SPD-F085 ONSEMI
Hersteller: ONSEMICategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 23.22 EUR |
| 5+ | 15.39 EUR |
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Technische Details FGY160T65SPD-F085 ONSEMI
Description: IGBT TRENCH FS 650V 240A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 132 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 53ns/98ns, Switching Energy: 12.4mJ (on), 5.7mJ (off), Test Condition: 400V, 160A, 15V, Part Status: Active, Current - Collector (Ic) (Max): 240 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 480 A, Power - Max: 882 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FGY160T65SPD-F085 nach Preis ab 13.01 EUR bis 25.17 EUR
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FGY160T65SPD-F085 | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 163nC Kind of package: tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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FGY160T65SPD-F085 | Hersteller : onsemi |
Description: IGBT TRENCH FS 650V 240A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 132 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/98ns Switching Energy: 12.4mJ (on), 5.7mJ (off) Test Condition: 400V, 160A, 15V Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 480 A Power - Max: 882 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 32870 Stücke: Lieferzeit 10-14 Tag (e) |
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FGY160T65SPD-F085 | Hersteller : onsemi / Fairchild |
IGBTs 650V Field Stop Gen3 Trench IGBT |
auf Bestellung 597 Stücke: Lieferzeit 10-14 Tag (e) |
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FGY160T65SPD-F085 | Hersteller : ONSEMI |
Description: ONSEMI - FGY160T65SPD-F085 - IGBT, N-Kanal, 240 A, 1.6 V, 882 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 882W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: Trench Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 240A SVHC: Lead (23-Jan-2024) |
auf Bestellung 414 Stücke: Lieferzeit 14-21 Tag (e) |
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FGY160T65SPD-F085 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 240A 882000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
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