auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.04 EUR |
| 10+ | 10.93 EUR |
| 120+ | 10.1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FGY60T120SQDN onsemi
Description: IGBT 1200V 120A TO-247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 52ns/296ns, Test Condition: 600V, 60A, 10Ohm, 15V, Gate Charge: 311 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 517 W.
Weitere Produktangebote FGY60T120SQDN nach Preis ab 8.88 EUR bis 18.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FGY60T120SQDN | Hersteller : onsemi |
 Description: IGBT 1200V 120A TO-247-3Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 52ns/296ns Test Condition: 600V, 60A, 10Ohm, 15V Gate Charge: 311 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A Power - Max: 517 W |
auf Bestellung 4046 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
FGY60T120SQDN | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 120A 517000mW 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||
| FGY60T120SQDN | Hersteller : ON Semiconductor |
|
auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
| FGY60T120SQDN | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3 Kind of package: tube Gate charge: 311nC Gate-emitter voltage: ±25V Collector current: 60A Pulsed collector current: 240A Power dissipation: 259W Collector-emitter voltage: 1.2kV Type of transistor: IGBT Mounting: THT Case: TO247-3 |
Produkt ist nicht verfügbar |