| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.55 EUR |
| 10+ | 13.01 EUR |
| 120+ | 12.02 EUR |
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Technische Details FGY60T120SQDN onsemi
Description: IGBT 1200V 120A TO-247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 52ns/296ns, Test Condition: 600V, 60A, 10Ohm, 15V, Gate Charge: 311 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 517 W.
Weitere Produktangebote FGY60T120SQDN nach Preis ab 10.7 EUR bis 85.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FGY60T120SQDN | onsemi |
 Description: IGBT 1200V 120A TO-247-3Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 52ns/296ns Test Condition: 600V, 60A, 10Ohm, 15V Gate Charge: 311 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A Power - Max: 517 W |
auf Bestellung 626 Stücke: Lieferzeit 10-14 Tag (e) |
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FGY60T120SQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3 Collector current: 60A Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 240A Kind of package: tube Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 259W Gate charge: 311nC Type of transistor: IGBT |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGY60T120SQDN | ON Semiconductor |
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auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FGY60T120SQDN |
|
Hersteller: onsemi
Description: IGBT 1200V 120A TO-247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 52ns/296ns
Test Condition: 600V, 60A, 10Ohm, 15V
Gate Charge: 311 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 517 W
Description: IGBT 1200V 120A TO-247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 52ns/296ns
Test Condition: 600V, 60A, 10Ohm, 15V
Gate Charge: 311 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 517 W
auf Bestellung 626 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.99 EUR |
| 30+ | 13.21 EUR |
| 120+ | 11.29 EUR |
| 510+ | 10.7 EUR |
| FGY60T120SQDN |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Collector current: 60A
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Kind of package: tube
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 259W
Gate charge: 311nC
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Collector current: 60A
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Kind of package: tube
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 259W
Gate charge: 311nC
Type of transistor: IGBT
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| FGY60T120SQDN |
|
Hersteller: ON Semiconductor
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)