FGY60T120SWD onsemi
Hersteller: onsemi
Description: IGBT FS 1200V 105A TO-247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15A, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 28.8ns/153.6ns
Switching Energy: 5.7mJ (on), 2.8mJ (off)
Test Condition: 600V, 60A, 4.7Ohm, 15V
Gate Charge: 174 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 635 W
| Anzahl | Preis |
|---|---|
| 2+ | 11.72 EUR |
| 30+ | 6.79 EUR |
| 120+ | 5.71 EUR |
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Technische Details FGY60T120SWD onsemi
Description: IGBT FS 1200V 105A TO-247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15A, 60A, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 28.8ns/153.6ns, Switching Energy: 5.7mJ (on), 2.8mJ (off), Test Condition: 600V, 60A, 4.7Ohm, 15V, Gate Charge: 174 nC, Current - Collector (Ic) (Max): 105 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 635 W.
Weitere Produktangebote FGY60T120SWD nach Preis ab 5.79 EUR bis 11.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FGY60T120SWD | Hersteller : onsemi |
IGBTs 1200V, 60A Field Stop VII (FS7) Discrete IGBT |
auf Bestellung 470 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGY60T120SWD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 105A; 635W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 105A Power dissipation: 635W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 174nC |
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