auf Bestellung 450 Stücke:
Lieferzeit 154-168 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 21.5 EUR |
| 10+ | 18.43 EUR |
| 25+ | 16.72 EUR |
| 100+ | 15.37 EUR |
| 250+ | 14.43 EUR |
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Technische Details FGY75T120SWD onsemi
Description: IGBT FIELD STOP 1200V 150A TO247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 307 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 42ns/171ns, Switching Energy: 5mJ (on), 2.32mJ (off), Test Condition: 600V, 75A, 4.7Ohm, 15V, Gate Charge: 214 nC, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 503 W.
Weitere Produktangebote FGY75T120SWD
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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FGY75T120SWD | Hersteller : ON Semiconductor |
 1200V, 75A Field Stop VII Discrete IGBT in Power TO247-3L Packaging |
Produkt ist nicht verfügbar |
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FGY75T120SWD | Hersteller : ON Semiconductor |
1200V, 75A Field Stop VII Discrete IGBT in Power TO247-3L Packaging |
Produkt ist nicht verfügbar |
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FGY75T120SWD | Hersteller : onsemi |
Description: IGBT FIELD STOP 1200V 150A TO247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 307 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 42ns/171ns Switching Energy: 5mJ (on), 2.32mJ (off) Test Condition: 600V, 75A, 4.7Ohm, 15V Gate Charge: 214 nC Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 300 A Power - Max: 503 W |
Produkt ist nicht verfügbar |