FGY75T95SQDT ON Semiconductor

Description: IGBT TRENCH FS 950V 150A TO-247, Power - Max: 434 W, Current - Collector Pulsed (Icm): 300 A, Voltage - Collector Emitter Breakdown (Max): 950 V, Current - Collector (Ic) (Max): 150 A, Gate Charge: 137 nC, Test Condition: 600V, 75A, 4.7Ohm, 15V, Switching Energy: 8.8mJ (on), 3.2mJ (off), Td (on/off) @ 25°C: 28.8ns/117ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 2.11V @ 15V, 75A, Reverse Recovery Time (trr): 259 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.