FII30-12E
Hersteller:
NPT3 IGBT Phaseleg Topology in ISOPLUS i4-PAC Ic25 = 33 A, Vces = 1200 V Група товару: Силові IGBT-модулі Од. вим: шт
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Technische Details FII30-12E
Description: IGBT H BRIDGE 1200V 33A I4PAK5, Packaging: Tube, Package / Case: i4-Pac™-5, Mounting Type: Through Hole, Input: Standard, Configuration: Half Bridge, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 20A, NTC Thermistor: No, Supplier Device Package: ISOPLUS i4-PAC™, IGBT Type: NPT, Part Status: Obsolete, Current - Collector (Ic) (Max): 33 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 150 W, Current - Collector Cutoff (Max): 200 µA, Input Capacitance (Cies) @ Vce: 1.2 nF @ 25 V.
Weitere Produktangebote FII30-12E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FII30-12E | Hersteller : IXYS |
Description: IGBT H BRIDGE 1200V 33A I4PAK5 Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 20A NTC Thermistor: No Supplier Device Package: ISOPLUS i4-PAC™ IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 150 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 1.2 nF @ 25 V |
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