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FMMT411FDBWQ-7

FMMT411FDBWQ-7 Diodes Incorporated

FMMT411FDBWQ.pdf Hersteller: Diodes Incorporated
Description: AVALANCHE TRANSISTOR W-DFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.6 EUR
6000+ 2.5 EUR
Mindestbestellmenge: 3000
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Technische Details FMMT411FDBWQ-7 Diodes Incorporated

Description: AVALANCHE TRANSISTOR W-DFN2020-3, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN - Avalanche Mode, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V, Frequency - Transition: 110MHz, Supplier Device Package: W-DFN2020-3 (Type A), Grade: Automotive, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 820 mW, Qualification: AEC-Q101.

Weitere Produktangebote FMMT411FDBWQ-7 nach Preis ab 2.77 EUR bis 5.35 EUR

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FMMT411FDBWQ-7 FMMT411FDBWQ-7 Hersteller : Diodes Incorporated FMMT411FDBWQ-3073635.pdf Bipolar Transistors - BJT Avalanche Transistor W-DFN2020-3/SWP T&R 3K
auf Bestellung 2236 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.26 EUR
10+ 4.42 EUR
25+ 4.17 EUR
100+ 3.59 EUR
250+ 3.4 EUR
500+ 3.17 EUR
1000+ 2.9 EUR
FMMT411FDBWQ-7 FMMT411FDBWQ-7 Hersteller : Diodes Incorporated FMMT411FDBWQ.pdf Description: AVALANCHE TRANSISTOR W-DFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
auf Bestellung 38952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.35 EUR
10+ 4.49 EUR
100+ 3.63 EUR
500+ 3.23 EUR
1000+ 2.77 EUR
Mindestbestellmenge: 4
FMMT411FDBWQ-7 Hersteller : Diodes Inc fmmt411fdbwq.pdf NPN Low Voltage Avalanche Transistor
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