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FP06R12W1T4B3BOMA1

FP06R12W1T4B3BOMA1 Infineon Technologies


Infineon-FP06R12W1T4_B3-DS-v02_03-en_de.pdf?fileId=db3a30433ba77ced013bada6fc1e33b3 Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 0 94W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
auf Bestellung 24 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+62.62 EUR
24+55.80 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FP06R12W1T4B3BOMA1 Infineon Technologies

Category: IGBT modules, Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A, Power dissipation: 94W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: EasyPIM™ 1B, Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT, Case: AG-EASY1B-1, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 6A, Pulsed collector current: 12A, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote FP06R12W1T4B3BOMA1 nach Preis ab 71.50 EUR bis 71.50 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 Hersteller : Infineon Technologies 3990ds_fp06r12w1t4_b3_2_3_ja-en.pdffolderiddb3a30433db6f09f013dca0fd1.pdf Trans IGBT Module N-CH 1200V 12A 94W 20-Pin EASY1B-1 Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 Hersteller : Infineon Technologies 3990ds_fp06r12w1t4_b3_2_3_ja-en.pdffolderiddb3a30433db6f09f013dca0fd1.pdf Trans IGBT Module N-CH 1200V 12A 94000mW 20-Pin EASY1B-1 Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH