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FP06R12W1T4B3BOMA1

FP06R12W1T4B3BOMA1 Infineon Technologies

Infineon-FP06R12W1T4_B3-DS-v02_03-en_de.pdf?fileId=db3a30433ba77ced013bada6fc1e33b3
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 0 94W
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 94 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 12 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details FP06R12W1T4B3BOMA1 Infineon Technologies

Description: IGBT MODULE 1200V 0 94W, Input Capacitance (Cies) @ Vce: 600 pF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 94 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 12 A, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A, Operating Temperature: -40°C ~ 150°C, Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.

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FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES FP06R12W1T4B3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 6A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mechanical mounting: screw
Power dissipation: 94W
Technology: EasyPIM™ 1B
auf Bestellung 22 Stücke:
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FP06R12W1T4B3BOMA1 FP06R12W1T4B3.pdf
FP06R12W1T4B3BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 6A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mechanical mounting: screw
Power dissipation: 94W
Technology: EasyPIM™ 1B
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH