FP06R12W1T4B3BOMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 0 94W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 74.52 EUR |
| 24+ | 66.4 EUR |
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Technische Details FP06R12W1T4B3BOMA1 Infineon Technologies
Description: IGBT MODULE 1200V 0 94W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 94 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 600 pF @ 25 V.
Weitere Produktangebote FP06R12W1T4B3BOMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
FP06R12W1T4B3BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Power dissipation: 94W Technology: EasyPIM™ 1B Mechanical mounting: screw Pulsed collector current: 12A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Case: AG-EASY1B-1 Gate-emitter voltage: ±20V Collector current: 6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FP06R12W1T4B3BOMA1 | Infineon Technologies |
Trans IGBT Module N-CH 1200V 12A 94W 20-Pin EASY1B-1 Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FP06R12W1T4B3BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 94W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Pulsed collector current: 12A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Collector current: 6A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 94W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Pulsed collector current: 12A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Collector current: 6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FP06R12W1T4B3BOMA1 |
|
Hersteller: Infineon Technologies
Trans IGBT Module N-CH 1200V 12A 94W 20-Pin EASY1B-1 Tray
Trans IGBT Module N-CH 1200V 12A 94W 20-Pin EASY1B-1 Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen
Stück im Wert von UAH