FQA140N10 ONSEMI
Hersteller: ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 9.67 EUR |
| 11+ | 6.52 EUR |
| 12+ | 6.16 EUR |
| 450+ | 5.96 EUR |
| 1020+ | 5.93 EUR |
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Technische Details FQA140N10 ONSEMI
Description: MOSFET N-CH 100V 140A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V.
Weitere Produktangebote FQA140N10 nach Preis ab 5.48 EUR bis 11.58 EUR
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FQA140N10 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 99A Pulsed drain current: 560A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 10mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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FQA140N10 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 140A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
auf Bestellung 612 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA140N10 | Hersteller : onsemi / Fairchild |
MOSFETs 100V N-Channel QFET |
auf Bestellung 2113 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA140N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube |
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FQA140N10 | Hersteller : ON Semiconductor |
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FQA140N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube |
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FQA140N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |