| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.84 EUR |
| 10+ | 8.13 EUR |
| 120+ | 7.27 EUR |
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Technische Details FQA140N10 onsemi / Fairchild
Description: MOSFET N-CH 100V 140A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V.
Weitere Produktangebote FQA140N10 nach Preis ab 6.96 EUR bis 15.37 EUR
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FQA140N10 | onsemi |
 Description: MOSFET N-CH 100V 140A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
auf Bestellung 1062 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA140N10 | onsemi |
MOSFETs 100V N-Channel QFET |
auf Bestellung 3091 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA140N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 99A Pulsed drain current: 560A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 10mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FQA140N10 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 1062 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.29 EUR |
| 30+ | 8.95 EUR |
| 60+ | 8.19 EUR |
| 120+ | 7.56 EUR |
| 510+ | 6.96 EUR |
| FQA140N10 |
|
Hersteller: onsemi
MOSFETs 100V N-Channel QFET
MOSFETs 100V N-Channel QFET
auf Bestellung 3091 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.37 EUR |
| 10+ | 8.23 EUR |
| 120+ | 8.1 EUR |
| FQA140N10 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)