Weitere Produktangebote FQA36P15
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQA36P15 | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 150V 36A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FQA36P15 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 150V 36A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FQA36P15 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 150V 36A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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| FQA36P15 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 150V 36A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FQA36P15 | Hersteller : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Power dissipation: 294W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 105nC Technology: QFET® Drain current: -25.5A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQA36P15 | Hersteller : onsemi |
Description: MOSFET P-CH 150V 36A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQA36P15 | Hersteller : onsemi / Fairchild |
MOSFETs 150V P-Channel QFET |
Produkt ist nicht verfügbar |
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FQA36P15 | Hersteller : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Power dissipation: 294W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 105nC Technology: QFET® Drain current: -25.5A |
Produkt ist nicht verfügbar |