FQA36P15
Produktcode: 52210
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Lieblingsprodukt
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote FQA36P15 nach Preis ab 4.24 EUR bis 6.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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FQA36P15 | ONSEMI |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -25.5A Power dissipation: 294W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 257 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQA36P15 |
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Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 6.08 EUR |
| 18+ | 5 EUR |
| 30+ | 4.24 EUR |


