| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.39 EUR |
| 10+ | 5.24 EUR |
| 120+ | 4.93 EUR |
| 510+ | 4.77 EUR |
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Technische Details FQA8N100C onsemi / Fairchild
Description: MOSFET N-CH 1000V 8A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V, Power Dissipation (Max): 225W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V.
Weitere Produktangebote FQA8N100C nach Preis ab 5.57 EUR bis 14.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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FQA8N100C | onsemi |
 MOSFETs 1000V N-Channe MOSFET |
auf Bestellung 10821 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA8N100C | onsemi |
Description: MOSFET N-CH 1000V 8A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V Power Dissipation (Max): 225W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V |
auf Bestellung 325 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA8N100C | Fairchild |
N-MOSFET 8A 1000V 225W 1.45Ω FQA8N100C TFQA8n100c Anzahl je Verpackung: 10 Stücke |
auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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| FQA8N100C |
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Hersteller: onsemi
MOSFETs 1000V N-Channe MOSFET
MOSFETs 1000V N-Channe MOSFET
auf Bestellung 10821 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.72 EUR |
| 10+ | 6.58 EUR |
| FQA8N100C |
|
Hersteller: onsemi
Description: MOSFET N-CH 1000V 8A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Description: MOSFET N-CH 1000V 8A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.73 EUR |
| 30+ | 6.69 EUR |
| 120+ | 5.57 EUR |
| FQA8N100C |
|
Hersteller: Fairchild
N-MOSFET 8A 1000V 225W 1.45Ω FQA8N100C TFQA8n100c
Anzahl je Verpackung: 10 Stücke
N-MOSFET 8A 1000V 225W 1.45Ω FQA8N100C TFQA8n100c
Anzahl je Verpackung: 10 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 14.02 EUR |