auf Bestellung 12446 Stücke:
Lieferzeit 210-224 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 12.84 EUR |
| 10+ | 12.22 EUR |
| 25+ | 9.83 EUR |
| 100+ | 8.81 EUR |
| 250+ | 8.5 EUR |
| 450+ | 7.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQA8N100C onsemi / Fairchild
Description: MOSFET N-CH 1000V 8A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V, Power Dissipation (Max): 225W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V.
Weitere Produktangebote FQA8N100C nach Preis ab 11.33 EUR bis 11.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| FQA8N100C | Hersteller : Fairchild |
 N-MOSFET 8A 1000V 225W 1.45Ω FQA8N100C TFQA8n100cAnzahl je Verpackung: 10 Stücke |
auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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FQA8N100C | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-3P Tube |
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FQA8N100C | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-3P Tube |
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FQA8N100C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 5A; 225W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 5A Power dissipation: 225W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FQA8N100C | Hersteller : onsemi |
Description: MOSFET N-CH 1000V 8A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V Power Dissipation (Max): 225W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQA8N100C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 5A; 225W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 5A Power dissipation: 225W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |