auf Bestellung 321 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.20 EUR |
| 10+ | 5.56 EUR |
| 25+ | 5.26 EUR |
| 100+ | 4.56 EUR |
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Technische Details FQA8N90C-F109 onsemi / Fairchild
Description: MOSFET N-CH 900V 8A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 4A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V.
Weitere Produktangebote FQA8N90C-F109 nach Preis ab 4.46 EUR bis 6.74 EUR
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FQA8N90C-F109 | Hersteller : onsemi |
 Description: MOSFET N-CH 900V 8A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 4A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V |
auf Bestellung 155 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA8N90C-F109 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P Tube |
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FQA8N90C-F109 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 240W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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FQA8N90C-F109 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 240W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |