| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.38 EUR |
| 10+ | 6.62 EUR |
| 25+ | 6.26 EUR |
| 100+ | 5.43 EUR |
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Technische Details FQA8N90C-F109 onsemi / Fairchild
Description: MOSFET N-CH 900V 8A TO3PN, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-3PN, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 240W (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Weitere Produktangebote FQA8N90C-F109 nach Preis ab 5.28 EUR bis 8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
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FQA8N90C-F109 | onsemi |
 Description: MOSFET N-CH 900V 8A TO3PNInput Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PN Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
auf Bestellung 107 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQA8N90C-F109 | ON Semiconductor |
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FQA8N90C-F109 |
|
Hersteller: onsemi
Description: MOSFET N-CH 900V 8A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 900V 8A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8 EUR |
| 10+ | 5.28 EUR |
| FQA8N90C-F109 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)