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FQA90N08 onsemi

Name: FQA90N08
Brand: onsemi
SKU: 1057580-3
Price: 6.79 EUR
Availability: InStock

Hersteller: onsemi
Description: MOSFET N-CH 80V 90A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 45A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V

auf Bestellung 57 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
4+	8.09 EUR
10+	6.79 EUR

Mindestbestellmenge: 4

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Technische Details FQA90N08 onsemi

Description: MOSFET N-CH 80V 90A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 45A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PN, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V.

Weitere Produktangebote FQA90N08

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FQA90N08	Hersteller : ON Semiconductor / Fairchild	MOSFET 80V N-Channel QFET	auf Bestellung 441 Stücke: Lieferzeit 14-28 Tag (e)
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FQA90N08	Hersteller : onsemi	Description: MOSFET N-CH 80V 90A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 45A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V	Produkt ist nicht verfügbar
FQA90N08	Hersteller : ONSEMI	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 63.5A; Idm: 360A; 214W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 63.5A Pulsed drain current: 360A Power dissipation: 214W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 16mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced	Produkt ist nicht verfügbar