FQA90N15-F109 ON Semiconductor
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 88+ | 6.23 EUR |
| 100+ | 5.71 EUR |
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Technische Details FQA90N15-F109 ON Semiconductor
Description: MOSFET N-CH 150V 90A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 45A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V.
Weitere Produktangebote FQA90N15-F109 nach Preis ab 5.21 EUR bis 6.23 EUR
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FQA90N15-F109 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 150V 90A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 597 Stücke: Lieferzeit 14-21 Tag (e) |
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FQA90N15-F109 | Hersteller : ON Semiconductor / Fairchild |
MOSFET 150V 90A N-Chan Power Trench |
auf Bestellung 678 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQA90N15-F109 | Hersteller : ON Semiconductor |
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auf Bestellung 4950 Stücke: Lieferzeit 21-28 Tag (e) |
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FQA90N15-F109 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 90A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 45A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V |
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FQA90N15-F109 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 63.5A Pulsed drain current: 360A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 18mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |