FQAF11N90C ONSEMI
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 120W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 80nC
Produktrezensionen
Produktbewertung abgeben
Technische Details FQAF11N90C ONSEMI
Description: MOSFET N-CH 900V 7A TO3PF, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PF, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V.
Weitere Produktangebote FQAF11N90C nach Preis ab 5.99 EUR bis 13.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FQAF11N90C | onsemi |
MOSFETs N-CH/900V/7A/A.QFET |
auf Bestellung 252 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
FQAF11N90C | onsemi |
Description: MOSFET N-CH 900V 7A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
auf Bestellung 105 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| FQAF11N90C | ONSEMI |
Description: ONSEMI - FQAF11N90C - Leistungs-MOSFET, n-Kanal, 900 V, 7 A, 0.91 ohm, TO-3PF Drain-Source-Spannung Vds: 900 Dauer-Drainstrom Id: 7 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 120 Bauform - Transistor: TO-3PF Anzahl der Pins: 3 Produktpalette: QFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.91 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 5 SVHC: Lead (17-Jan-2022) |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
|
| FQAF11N90C |
|
Hersteller: onsemi
MOSFETs N-CH/900V/7A/A.QFET
MOSFETs N-CH/900V/7A/A.QFET
auf Bestellung 252 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.6 EUR |
| 10+ | 6.01 EUR |
| 100+ | 5.99 EUR |
| FQAF11N90C |
|
Hersteller: onsemi
Description: MOSFET N-CH 900V 7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: MOSFET N-CH 900V 7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.78 EUR |
| 30+ | 6.12 EUR |
| FQAF11N90C |
|
Hersteller: ONSEMI
Description: ONSEMI - FQAF11N90C - Leistungs-MOSFET, n-Kanal, 900 V, 7 A, 0.91 ohm, TO-3PF
Drain-Source-Spannung Vds: 900
Dauer-Drainstrom Id: 7
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 120
Bauform - Transistor: TO-3PF
Anzahl der Pins: 3
Produktpalette: QFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.91
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 5
SVHC: Lead (17-Jan-2022)
Description: ONSEMI - FQAF11N90C - Leistungs-MOSFET, n-Kanal, 900 V, 7 A, 0.91 ohm, TO-3PF
Drain-Source-Spannung Vds: 900
Dauer-Drainstrom Id: 7
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 120
Bauform - Transistor: TO-3PF
Anzahl der Pins: 3
Produktpalette: QFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.91
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 5
SVHC: Lead (17-Jan-2022)
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 13.24 EUR |
| 22+ | 10.75 EUR |
| 100+ | 6.96 EUR |