FQB11P06TM

FQB11P06TM onsemi / Fairchild


FQB11P06_D-2313547.pdf Hersteller: onsemi / Fairchild
MOSFET 60V P-Channel QFET
auf Bestellung 6453 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.89 EUR
10+2.60 EUR
100+2.02 EUR
500+1.67 EUR
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Technische Details FQB11P06TM onsemi / Fairchild

Description: MOSFET P-CH 60V 11.4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc), Rds On (Max) @ Id, Vgs: 175mOhm @ 5.7A, 10V, Power Dissipation (Max): 3.13W (Ta), 53W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V.

Weitere Produktangebote FQB11P06TM

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FQB11P06TM FQB11P06TM Hersteller : ONSEMI fqb11p06-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.05A; Idm: -45.6A; 53W
Mounting: SMD
Case: D2PAK
Drain-source voltage: -60V
Drain current: -8.05A
On-state resistance: 0.175Ω
Type of transistor: P-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -45.6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FQB11P06TM FQB11P06TM Hersteller : onsemi fqb11p06-d.pdf Description: MOSFET P-CH 60V 11.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQB11P06TM FQB11P06TM Hersteller : onsemi fqb11p06-d.pdf Description: MOSFET P-CH 60V 11.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQB11P06TM FQB11P06TM Hersteller : ONSEMI fqb11p06-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.05A; Idm: -45.6A; 53W
Mounting: SMD
Case: D2PAK
Drain-source voltage: -60V
Drain current: -8.05A
On-state resistance: 0.175Ω
Type of transistor: P-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -45.6A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH