auf Bestellung 6453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.89 EUR |
| 10+ | 2.6 EUR |
| 100+ | 2.02 EUR |
| 500+ | 1.67 EUR |
Produktrezensionen
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Technische Details FQB11P06TM onsemi / Fairchild
Description: MOSFET P-CH 60V 11.4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc), Rds On (Max) @ Id, Vgs: 175mOhm @ 5.7A, 10V, Power Dissipation (Max): 3.13W (Ta), 53W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V.
Weitere Produktangebote FQB11P06TM
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQB11P06TM | Hersteller : ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -8.05A; Idm: -45.6A; 53W Mounting: SMD Case: D2PAK Drain-source voltage: -60V Drain current: -8.05A On-state resistance: 0.175Ω Type of transistor: P-MOSFET Power dissipation: 53W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: -45.6A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQB11P06TM | Hersteller : onsemi |
Description: MOSFET P-CH 60V 11.4A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 5.7A, 10V Power Dissipation (Max): 3.13W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQB11P06TM | Hersteller : onsemi |
Description: MOSFET P-CH 60V 11.4A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 5.7A, 10V Power Dissipation (Max): 3.13W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQB11P06TM | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.05A; Idm: -45.6A; 53W Mounting: SMD Case: D2PAK Drain-source voltage: -60V Drain current: -8.05A On-state resistance: 0.175Ω Type of transistor: P-MOSFET Power dissipation: 53W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: -45.6A |
Produkt ist nicht verfügbar |