FQB19N20LTM ONSEMI
Hersteller: ONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 84A
Drain-source voltage: 200V
Drain current: 13.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 35nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 106 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.94 EUR |
| 41+ | 1.76 EUR |
| 54+ | 1.33 EUR |
| 57+ | 1.26 EUR |
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Technische Details FQB19N20LTM ONSEMI
Description: MOSFET N-CH 200V 21A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V, Power Dissipation (Max): 3.13W (Ta), 140W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V.
Weitere Produktangebote FQB19N20LTM nach Preis ab 1.26 EUR bis 3.93 EUR
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FQB19N20LTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 84A Drain-source voltage: 200V Drain current: 13.3A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Gate charge: 35nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 106 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB19N20LTM | Hersteller : onsemi / Fairchild |
MOSFET 200V N-Ch QFET Logic Level |
auf Bestellung 31520 Stücke: Lieferzeit 196-210 Tag (e) |
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FQB19N20LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R |
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FQB19N20LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R |
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FQB19N20LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R |
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FQB19N20LTM | Hersteller : onsemi |
Description: MOSFET N-CH 200V 21A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
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FQB19N20LTM | Hersteller : onsemi |
Description: MOSFET N-CH 200V 21A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
Produkt ist nicht verfügbar |